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JCET

RB520S-30 Datasheet Preview

RB520S-30 Datasheet

Schottky barrier Diode

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-523 Plastic-Encapsulate Diodes
RB520S-30 Schottky barrier Diode
FEATURES
z Small surface mounting type
z Low IR
z High reliability
SOD-523
MARKING: B
The marking bar indicates the cathode
Solid dot = Green molding compound device,if none,
the normal device.
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25
Parameter
Symbol
Limit
DC reverse voltage
Mean rectifying current
NCounrr-erenpt@ettit=i8v.e3mPesak Forward Surge
Power dissipation
Thermal resistance junction to ambient
VR
IO
IFSM
PD
RθJA
30
200
1
150
667
Junction temperature
Storage temperature
Tj
Tstg
125
-55~+150
Unit
V
mA
A
mW
/W
Electrical Ratings @Ta=25
Parameter
Forward voltage
Reverse current
Symbol
VF
IR
Min Typ
Max Unit
0.6 V
1 μA
Conditions
IF=200mA
VR=10V
www.cj-elec.com
1
E,Apr,2016




JCET

RB520S-30 Datasheet Preview

RB520S-30 Datasheet

Schottky barrier Diode

No Preview Available !

Typical Characteristics
Forward Characteristics
600
100
10
1
0.1
0.01
0
100 200 300 400 500 600 700 800
FORWARD VOLTAGE V (mV)
F
Reverse Characteristics
1000
100
Ta=100 oC
10
1
Ta=25 oC
0.1
0.01
0
5 10 15 20 25
REVERSE VOLTAGE V (V)
R
30
Capacitance Characteristics
100
Ta=25
f=1MHz
30
10
3
1
0 5 10 15 20
REVERSE VOLTAGE V (V)
R
Power Derating Curve
200
150
100
50
0
0 25 50 75 100 125
AMBIENT TEMPERATURE T ()
a
www.cj-elec.com
2
E,Apr,2016


Part Number RB520S-30
Description Schottky barrier Diode
Maker JCET
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RB520S-30 Datasheet PDF






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