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2SB649 Datasheet Preview

2SB649 Datasheet

PNP Transistor

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
2SB649/2SB649A TRANSISTOR (PNP)
TO- 126
FEATURES
Low Frequency Power Amplifier Complementary Pair
with 2SD669/A
1. EMITTER
MAXIMUM RATINGS (Ta=25unless otherwise noted)
2. COLLECTOR
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-180
V
3. BASE
VCEO
Collector-Emitter Voltage
2SB649
-120
V
2SB649A
-160
VEBO
Emitter-Base Voltage
-5 V
IC
Collector Current –Continuous
-1.5
A
PC Collector Power Dissipation
1
W
TJ Junction Temperature
150
Tstg Storage Temperature
-55-150
BDTICELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Symbol Test conditions
Min Typ Max Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO
V(BR)CEO
IC =-1mA,IE=0
IC=-10mA,IB=0
2SB649
2SB649A
-180
-120
-160
V
V
Emitter-base breakdown voltage
V(BR)EBO IE=-1mA, IC =0
-5
V
Collector cut-off current
ICBO VCB=-160V,IE=0
-10 µA
Emitter cut-off current
DC current gain
IEBO
hFE(1)
VEB=-4V,IC=0
VCE=-5V,IC=-150mA
2SB649
2SB649A
60
60
-10 µA
320
200
hFE(2) VCE=-5V,IC=-500mA
30
Collector-emitter saturation voltage
VCE(sat) IC=-500mA,IB=-50mA
-1 V
Base-emitter voltage
VBE VCE=-5V,IC=-150mA
-1.5 V
Transition frequency
fT VCE=-5V,IC=-150mA
140 MHz
Collector output capacitance
CLASSIFICATION OF hFE(1)
Rank
Cob VCB=-10V,IE=0,f=1MHz
BC
27
D
pF
Range 2SB649
60-120
100-200
160-320
2SB649A
60-120
100-200
www.BDTIC.com/jcst


Part Number 2SB649
Description PNP Transistor
Maker JCST
PDF Download

2SB649 Datasheet PDF





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