Full PDF Text Transcription for MJD2955 (Reference)
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MJD2955. For precise diagrams, and layout, please refer to the original PDF.
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors MJD2955 TRANSISTOR (PNP) FEATURES y Designed for General Purpose Amplifier an...
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TRANSISTOR (PNP) FEATURES y Designed for General Purpose Amplifier and Low Speed Switching Applications y Electrically Simiar to MJD3055 y DC Current Gain Specified to10 Amperes MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -10 A PC Collector Power Dissipation 1.25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ TO-251-3L 1.BASE 2.COLLECTOR 3.
MJD2955 Datasheet
