p-channel enhancement mode mosfet.
z z z z z -30V/-4.3A,RDS(ON)< 65m@VGS=- 10V -30V/-3.4A,RDS(ON)< 90m@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and ma.
The WPM3401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are parti.
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