Marking Code: "S7"
RB501V-40
Silicon Epitaxial Planar Schottky Barrier Diode
A C
B DE
G F
Maximum Ratings (TA=25℃ unless otherwise noted)
Parameter Peak Reverse Voltage Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz for 1 Cyc. ) Junction Temperature Storage Temperature Range
SOD-323F
INCHES
MM
DIM
MIN MAX MIN MAX
A
0.091
0.110
2.30
2.80
B
0.045
0.053
1.15
1.
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Features
* Small surface mounting type * High reliability * Low current rectification * Marking Code: "S7"
RB501V-40
Silicon Epitaxial Planar Schottky Barrier Diode
A C
B DE
G F
Maximum Ratings (TA=25℃ unless otherwise noted)
Parameter Peak Reverse Voltage Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz for 1 Cyc.) Junction Temperature Storage Temperature Range
SOD-323F
INCHES
MM
DIM
MIN MAX MIN MAX
A
0.091
0.110
2.30
2.80
B
0.045
0.053
1.15
1.35
C
0.063
0.071
1.60
1.80
D
0.010
0.016
0.25
0.40
E
0.031
0.043
0.80
1.10
F
0.004
0.006
0.10
0.15
G
0.016
0.024
0.41
0.61
Symbol VRM VR IO IFSM Tj Tstg
Value 45 40 0.1 1 125
- 40 to + 125
Unit V V A A ℃ ℃
Version: 6.1
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RB501V-40 Datasheet
