1 W of power can be obtained despite compact size.
High surge withstand level.
Voltage regulation and voltage limiting.
Voltage surge absorption
ZMPTZ3V6B THRU ZMPTZ36B
Silicon Epitaxial Planar Zener Diodes
Cathode
C B A
LL-41
INCHES
MM
DIM
MIN MAX MIN MAX
A
0.189
0.205
4.80
5.20
B
0.012
0.020
0.30
0.50
C
0.093
0.100
2.35
2.55
Absolute Maximum Ratings (TA=25℃ unless otherwise noted)
Parameter Power Dissipation Junctio.
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Features
* Small surface mounting type * 1 W of power can be obtained despite compact size * High surge withstand level * Voltage regulation and voltage limiting * Voltage surge absorption
ZMPTZ3V6B THRU ZMPTZ36B
Silicon Epitaxial Planar Zener Diodes
Cathode
C B A
LL-41
INCHES
MM
DIM
MIN MAX MIN MAX
A
0.189
0.205
4.80
5.20
B
0.012
0.020
0.30
0.50
C
0.093
0.100
2.35
2.55
Absolute Maximum Ratings (TA=25℃ unless otherwise noted)
Parameter Power Dissipation Junction Temperature Storage Temperature Range
Symbol Ptot Tj Tstg
Value 1
150 - 55 to + 150
Unit W ℃ ℃
Version: 6.1
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ZMPTZ3V6B Datasheet
