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JILIN SINO-MICROELECTRONICS

3DD5011 Datasheet Preview

3DD5011 Datasheet

CASE-RATED BIPOLAR TRANSISTOR

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低频放大管壳额定的双极型晶体管
CASE-RATED BIPOLAR TRANSISTOR 3DD5011 FOR LOW FREQUENCY AMPLIFICATION
R
3DD5011
主要参数 MAIN CHARACTERISTICS
BVCBO
IC
VCE(sat)
tf
900V
10 A
0.5 V(max)
0.3 μs(max)
用途
z 彩色电视机开关电源
电路
APPLICATIONS
z Switching power supply
for color TV.
封装 Package
TO-3P(H)IS
产品特性
FEATURES
123
z3DD5011 是 NPN 双极型 z 3DD5011 is high breakdown
高反压大功率晶体管,制 voltage of NPN bipolar transistor. 等效电路 EQUIVALENT CIRCUIT
造中采用的主要工艺技 The main process of manufacture:
术有:高压平面工艺技 high voltage planar technology,
术、三重扩散技术等,采 triple diffused process etc.,
用塑料全包封结构。环保 adoption of fully plastic packge.
(RoHS)产品。
RoHS product.
订货信息 ORDER MESSAGE
订货型号
Order codes
印记
无卤素
封装
Marking Halogen Free Package
3DD5011-O-A-N-D
D5011 含卤素
TO-3P(H)IS
包装
Packaging
泡沫 Foam
器件重量
Device
Weight
5.50 g(typ)
版本:201504A
1/5




JILIN SINO-MICROELECTRONICS

3DD5011 Datasheet Preview

3DD5011 Datasheet

CASE-RATED BIPOLAR TRANSISTOR

No Preview Available !

R
绝对最大额定值 ABSOLUTE RATINGS (Tc=25)
项目
符号
Parameter
Symbol
集电极基极直流电压
CollectorBase Voltage
BVCBO
集电极发射极直流电压
CollectorEmitter Voltage
BVCEO
发射极基极直流电压
EmitterBase Voltage
BVEBO
最大集电极电流
Collector Current
直流 DC
脉冲 Pulse
IC
ICP
最大基极直流电流
Base Current
IB
最大集电极耗散功率
Collector Power Dissipation
PC
最高结温
Max. Junction Temperature
Tj
储存温度
Storage Temperature Range
TSTG
3DD5011
数值
Value
900
单位
Unit
V
600 V
6V
10
20
A
5A
50 W
150
-55~+150
电特性 ELECTRICAL CHARACTERISTICS (Tc=25)
项目
Parameter
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
HFE
VCE(sat)
VBE(sat)
tf
ts
ft
测试条件
Tests conditions
IC=10mA,IB=0
IC=1mA,IE=0
IE=1mA,IC=0
VCB=900V, IE=0
VEB=6V, IC=0
VCE = 5V, IC = 1A
VCE = 5V, IC = 5A
IC=3A, IB=0.6A
IC=3A, IB=0.6A
IC=5A,2IB1=-IB2=2A
fH=15.75kHz
VCE=10V, IC=0.1A
最小值
Min
600
900
6
20
6
1.7
最大值
Max
1
10
35
0.5
1.3
0.3
4
单位
Unit
V
V
V
mA
μA
V
V
μs
μs
MHz
版本:201504A
2/5


Part Number 3DD5011
Description CASE-RATED BIPOLAR TRANSISTOR
Maker JILIN SINO-MICROELECTRONICS
PDF Download

3DD5011 Datasheet PDF






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