3DD5017P - CASE-RATED BIPOLAR TRANSISTOR

JILIN SINO

General Description

of Changes ：201108A 5/5

Key Features

3DD5017PNPN.
3DD5017P is high breakdown ，：、, 。 voltage of NPN bipolar transistor. The main process of manufacture: high voltage planar process, triple diffused process etc. , adoption of （RoHS）。 fully plastic packge. RoHS product.

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3DD5017P case-rated bipolar transistor by JILIN SINO - Datasheet Preview

Datasheet Details

Part number	3DD5017P
Manufacturer	JILIN SINO
File Size	199.49 KB
Description	CASE-RATED BIPOLAR TRANSISTOR
Datasheet	3DD5017P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5017P FOR LOW FREQUENCY R 3DD5017P MAIN CHARACTERISTICS Package TO-3P(H)IS BVCBO IC VCE(sat) tf 1000 V 12 A 0.5 V(max) 0.3 μs(max) ● APPLICATIONS ● Horizontal deflection output for color TV. 1 23 FEATURES ●3DD5017PNPN ● 3DD5017P is high breakdown ，：、, 。 voltage of NPN bipolar transistor. The main process of manufacture: high voltage planar process, triple diffused process etc., adoption of （RoHS）。 fully plastic packge. RoHS product.