JCS12N60CT
Key Features
- V 击穿电压温度特性 Breakdown Voltage Temperature Coefficient ΔBVDSS/Δ ID=250μA, referenced to TJ 25℃
- 0.5 - V/℃ 零栅压下漏极漏电流 Zero Gate Voltage Drain Current 正向栅极体漏电流 IDSS VDS=600V,VGS=0V, TC=25℃ VDS=480V, TC=125℃
- 10 μA Gate-body leakage current, forward IGSSF VDS=0V, VGS =30V
- 100 nA 反向栅极体漏电流 Gate-body leakage current, reverse IGSSR VDS=0V, VGS =-30V
- 0.56 0.65 Ω 正向跨导 Forward Transconductance gfs VDS = 40V, ID=6A（note 4）
- 13 - S 动态特性 Dynamic Characteristics 输入电容 Input capacitance 输出电容 Output capacitance Ciss Coss VDS=25V, VGS =0V, f=1.0MHZ
- 1790 2410 pF
- 175 229 pF 反向传输电容 Reverse transfer capacitance Crss
- 20 - nC 漏－源二极管特性及最大额定值 Drain-Source Diode Characteristics and 正向最大连续电流 Maximum Continuous Drain -Source Diode Forward Current IS
- 12 A 正向最大脉冲电流 Maximum Pulsed Drain-Source Diode Forward Current ISM
