Datasheet Summary
N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET
主要参数 MAIN CHARACTERISTICS
ID 1.3 A VDSS 600 V Rdson（Vgs=10V） 8.5 Ω Qg 9.1 nC
封装 Package
用途 z 高频开关电源 z 电子镇流器 z UPS 电源
APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS
产品特性 z低栅极电荷 z低 Crss (典型值 4.9pF) z开关速度快 z产品全部经过雪崩测试 z高抗 dv/dt 能力 zRoHS 产品
Features zLow gate charge zLow Crss (typical 4.9pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product
订货信息 ORDER MESSAGE
订货型号
印记
Order codes
Marking
JCS1N60V-O-V-N-B JCS1N60V
JCS1N60R-O-R-N-B JCS1N60R
JCS1N60S-O-S-N-B JCS1N60S
JCS1N60B-O-B-N-B JCS1N60B
JCS1N60C-O-C-N-B JCS1N60C
JCS1N60F-O-F-N-B...