• Part: JCS3N25FT
  • Manufacturer: JILIN SINO-MICROELECTRONICS
  • Size: 1.15 MB
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JCS3N25FT datasheet preview
JCS3N25FT page 2
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JCS3N25FT page 3
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JCS3N25FT Key Features

  • Low gate charge -Low Crss (typical 4.5pF ) -Fast switching -100% avalanche tested -Improved dv/dt capability -RoHS produ
  • pulse （note 1）
  • 55～+150
  • 漏极电流由最高结温限制
  • Drain current limited by maximum junction temperature
  • 100 nA
  • 100 nA
  • 1.7 2.2 Ω
  • 130 170 pF
  • 30 40 pF

Related JILIN SINO-MICROELECTRONICS Datasheets

Part Number Description
JCS3N25FT N-CHANNEL MOSFET
JCS3N25CT N-CHANNEL MOSFET
JCS3N25CT N-CHANNEL MOSFET
JCS3N25RT N-CHANNEL MOSFET
JCS3N25RT N-CHANNEL MOSFET

JCS3N25FT Description

N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET JCS3N25T 主要参数 MAIN CHARACTERISTICS 封装 Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ 用途 高频开关电源 电子镇流器 UPS 电源 3A 250 V 2.2Ω 4.4 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS 产品特性 低栅极电荷 低 Crss (典型值 4.5pF) 开关速度快 产品全部经过雪崩测试 高抗 dv/dt 能力 RoHS.