JCS55N06CH Key Features
- Low gate charge -Low Crss -Fast switching -100% avalanche tested -Improved dv/dt capability -RoHS product
- pulse（note 1）
- 漏极电流由最高结温限制 -Drain current limited by maximum junction temperature
- 100 μA
- 100 nA
- 100 nA
- 3.55 V
- 15.5 18 mΩ 34.7
- ns ns ns ns nC nC nC