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JILIN SINO-MICROELECTRONICS

JCS650F Datasheet Preview

JCS650F Datasheet

N- CHANNEL MOSFET

No Preview Available !

R
JCS650
主要参数 MAIN CHARACTERISTICS
ID
VDSS
Rdson(@Vgs=10V)
Qg
28.0A
200 V
0.085Ω
103nC
封装 Package
N 沟道增强型场效应晶体管
N- CHANNEL MOSFET
用途
z 高频开关电源
z 电子镇流器
z UPS 电源
APPLICATIONS
z High efficiency switch
mode power supplies
z Electronic lamp ballasts
based on half bridge
z UPS
产品特性
z低栅极电荷
zCrss (典型值 81pF)
z开关速度快
z产品全部经过雪崩测试
z高抗 dv/dt 能力
zRoHS 产品
FEATURES
zLow gate charge
zLow Crss (typical 81pF )
zFast switching
z100% avalanche tested
zImproved dv/dt capability
zRoHS product
订货信息 ORDER MESSAGE
订货型号
Order codes
JCS650C-O-C-N-B
JCS650F-O-S-N- B
JCS650S-O-S-N- A
JCS650S-O-S-N-B
印记
Marking
JCS650C
JCS650F
JCS650S
JCS650S
封装
无卤素
包装
Package Halogen Free Packaging
TO-220C
TO-220MF
TO-263
TO-263
NO
NO
NO
NO
条管 Tube
条管 Tube
卷盘 Reel
条管 Tube
器件重量
Device
Weight
2.15 g(typ)
2.20 g(typ)
1.37 g(typ)
1.37 g(typ)
版本:201408C
1/11




JILIN SINO-MICROELECTRONICS

JCS650F Datasheet Preview

JCS650F Datasheet

N- CHANNEL MOSFET

No Preview Available !

R
绝对最大额定值 ABSOLUTE RATINGS (Tc=25)
JCS650
数值
项目
符号
Value
JCS650C
Parameter
最高漏极-源极直流电压
Drain-Source Voltage
Symbol
VDSS
JCS650S
JCS650F
200
连续漏极电流
Drain Current -continuous
ID
T=25
T=100
28.0
17.7
28.0*
17.7*
最大脉冲漏极电流(注 1
Drain Current -pulse note 1
IDM
112 112*
最高栅源电压
Gate-Source Voltage
VGSS
±30
单脉冲雪崩能量(注 2
Single Pulsed Avalanche Energynote 2
EAS
575
雪崩电流(注 1
Avalanche Current note 1
IAR
28
重复雪崩能量(注 1
Repetitive Avalanche Current note 1
EAR
15.8
二极管反向恢复最大电压变化速率(注 3
Peak Diode Recovery dv/dt note 3
dv/dt
5.5
耗散功率
Power Dissipation
PD
TC=25
-Derate
above
25
158
1.265
50
0.40
最高结温及存储温度
Operating and Storage Temperature
Range
TJTSTG
-55+150
引线最高焊接温度
Maximum Lead Temperature for Soldering TL
Purposes
300
*漏极电流由最高结温限制
*Drain current limited by maximum junction temperature
单位
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
版本:201503B
2/11


Part Number JCS650F
Description N- CHANNEL MOSFET
Maker JILIN SINO-MICROELECTRONICS
PDF Download

JCS650F Datasheet PDF






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