• Part: JCS65N20ABT
  • Manufacturer: JILIN SINO-MICROELECTRONICS
  • Size: 1.10 MB
Download JCS65N20ABT Datasheet PDF
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JCS65N20ABT Key Features

  • Low gate charge -Low Crss -Fast switching -100% avalanche tested -Improved dv/dt capability -RoHS product
  • pulse（note 1）
  • 漏极电流由最高结温限制
  • Drain current limited by maximum junction temperature
  • 100 nA
  • 100 nA
  • 25 32 mΩ 50
  • 4100 4920 pF
  • 970 1164 pF
  • 130 160 pF

Related JILIN SINO-MICROELECTRONICS Datasheets

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JCS65N20T N-CHANNEL MOSFET
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JCS650S N-Channel MOSFET

JCS65N20ABT Description

N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET JCS65N20ABT 主要参数 MAIN CHARACTERISTICS 封装 Package ID 65A VDSS 200 V Rdson（@Vgs=10V） 25mΩ Qg 120nc 用途 高频开关电源 电子镇流器 UPS 电源 APPLICATIONS High frequency switch mode power supplies Electronic lamp ballasts based on half bridge UPS 产品特性 低栅极电荷 低 Crss 开关速度快 产品全部经过雪崩测试 高抗 dv/dt 能力 RoHS.