• Part: JCS65N20T
  • Manufacturer: JILIN SINO-MICROELECTRONICS
  • Size: 849.45 KB
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JCS65N20T datasheet preview
JCS65N20T page 2
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JCS65N20T Key Features

  • Low gate charge -Low Crss -Fast switching -100% avalanche tested -Improved dv/dt capability -RoHS product
  • pulse（note 1）
  • 漏极电流由最高结温限制 -Drain current limited by maximum junction temperature
  • 零栅压下漏极漏电流 Zero Gate Voltage Drain Current 正向栅极体漏电流
  • 100 nA
  • 100 nA
  • 25 32 mΩ
  • 4100 4920 pF
  • 970 1164 pF
  • 130 160 pF

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JCS65N20T Description

N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET JCS65N20T 主要参数 MAIN CHARACTERISTICS 封装 Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ 用途 高频开关电源 电子镇流器 UPS 电源 65A 200 V 32mΩ 120nC APPLICATIONS High frequency switch mode power supplies Electronic lamp ballasts based on half bridge UPS 产品特性 低栅极电荷 低 Crss 开关速度快 产品全部经过雪崩测试 高抗 dv/dt 能力 RoHS.