JCS7HN60BC
Key Features
- Low gate charge
- Low Crss (typical 14pF )
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- 10 μA - - 100 μA Gate-body leakage current, forward IGSSF VDS=0V, VGS =30V
- 100 nA 反向栅极体漏电流 Gate-body leakage current, reverse IGSSR VDS=0V, VGS =-30V
- 1620 1890 pF - 125 170 pF 反向传输电容 Reverse transfer capacitance Crss
- 11 31 ns - 35 80 ns 延迟时间 Turn-Off delay time td(off)
- 46 95 ns 下降时间 Turn-Off Fall time tf