S9013M Datasheet | Jiangsu Changjiang Electronics Technology

DESCRIPTION NPN Epitaxial Silicon Transistor FEATURES High Collector Current. (IC=500m A) plementary to S9012M Excellent h FE linearity. APPLICATION 150m W Output Amplifier of Potable Radios in Class B Push-pull Operation. For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM,Note book PC, etc.) MARKING: J3 C 1. BASE 2. EMITTER 3. COLLECTOR B C C BACK J3 B E MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Temperature Storage Temperature Parameter Value 40 25 5 500 150 150 -55-150 Units V V V m A m W ℃ ℃ ELECTRICAL CHARACTERISTICS(Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage .. Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO h FE1 h FE2 VCE(sat) VBE(sat) unless otherwise Test conditions specified) MIN 40 25 5 0.1 0.1 0.1 120 40 0.6 1.2 150 8 V V MHz p F 400 TYP MAX UNIT V V V IC= 100µA, IE=0 IC=1m A, IB=0 IE=100µA IC=0 VCB=40 V,IE=0 VCE=20V,IB=0 VEB= 5V,IC=0 VCE=1V,IC=50m A VCE=1V,IC=500m A IC=500m A,IB= 50m A IC=500m A,IB= 50m A VCE=6V, IC= 20m A µA µA µA f T Cob f=30MHz VCB=6V,IE=0,f=1MHz .. CLASSIFICATION OF Rank Range h FE1 L 120-200 H 200-350 J 300-400 Typical Characteristics .. .. D im e n s io n s In M illim e t e r s M in . M ax. A 0 .4 5 0 0 .5 5 0 A1 0 .0 1 0 0 .0 9 0 b 0 .1 7 0 0 .2 7 0 b1 0 .2 7 0 0 .3 7 0 0 .2 5 0 R E F . b2 D 1 .1 5 0 1 .2 5 0 E 1 .1 5 0 1 .2 5 0 0 .4 7 0 R E F . D2 0 .8 1 0 R E F . E2 0 .8 0 0 T Y P . e 0 .2 8 0 R E F . L .. 0 .2 3 0 R E F . L1 0 .1 5 0 R E F . L2 0 .3 0 0 R E F . k z 0 .0 9 0 R E F . Sym bol D im e n s io n s In In c h e s M in . M ax. 0...