2N3904S
2N3904S is EPITAXIAL PLANAR NPN TRANSISTOR manufactured by KEC.
FEATURES
Low Leakage Current : ICEX=50n A(Max.), IBL=50n A(Max.) @VCE=30V, VEB=3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VCE(sat)=0.3V(Max.) @IC=50m A, IB=5m A. Low Collector Output Capacitance : Cob=4p F(Max.) @VCB=5V. plementary to 2N3906S.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
IC 200
Base Current
IB 50
Collector Power Dissipation
- 350
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
- : Package Mounted On 99.5% Alumina (10 8 0.6 )
UNIT V V V m A m A m W
EPITAXIAL PLANAR NPN TRANSISTOR
E L BL
DIM MILLIMETERS A 2.93+_ 0.20
B 1.30+0.20/-0.15
C 1.30 MAX D 0.40+0.15/-0.05
E 2.40+0.30/-0.20 1 G 1.90
H 0.95
J 0.13+0.10/-0.05
Q K 0.00 ~ 0.10
L 0.55
M 0.20...
