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KEC

2N3904S Datasheet Preview

2N3904S Datasheet

EPITAXIAL PLANAR NPN TRANSISTOR

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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Low Leakage Current
: ICEX=50nA(Max.), IBL=50nA(Max.)
@VCE=30V, VEB=3V.
Excellent DC Current Gain Linearity.
Low Saturation Voltage
: VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.
Low Collector Output Capacitance
: Cob=4pF(Max.) @VCB=5V.
Complementary to 2N3906S.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
VCBO
60
Collector-Emitter Voltage
VCEO
40
Emitter-Base Voltage
VEBO
6
Collector Current
IC 200
Base Current
IB 50
Collector Power Dissipation
PC * 350
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
* : Package Mounted On 99.5% Alumina (10 8 0.6 )
UNIT
V
V
V
mA
mA
mW
2N3904S
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
DIM MILLIMETERS
A 2.93+_ 0.20
B 1.30+0.20/-0.15
23
C 1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1 G 1.90
H 0.95
J 0.13+0.10/-0.05
Q K 0.00 ~ 0.10
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
P7
Q 0.1 MAX
M
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
Marking
ZCType Name
Lot No.
2018. 07. 16
Revision No : 4
1/4




KEC

2N3904S Datasheet Preview

2N3904S Datasheet

EPITAXIAL PLANAR NPN TRANSISTOR

No Preview Available !

2N3904S
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Base Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage *
Emitter-Base Breakdown Voltage
DC Current Gain
*
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small-Signal Current Gain
Collector Output Admittance
Noise Figure
*
ICEX
IBL
V(BR)CBO
V(BR)CEO
V(BR)EBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
Cob
Cib
hie
hre
hfe
hoe
NF
VCE=30V, VEB=3V
VCE=30V, VEB=3V
IC=10 A, IE=0
IC=1mA, IB=0
IE=10 A, IC=0
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=100mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=20V, IC=10mA, f=100MHz
VCB=5V, IE=0, f=1MHz
VBE=0.5V, IC=0, f=1MHz
VCE=10V, IC=1mA, f=1kHz
VCE=5V, IC=0.1mA Rg=1k ,
f=10Hz 15.7kHz
Delay Time
td 10kΩ
Vin
Vout
C Total< 4pF
Switching Time
Rise Time
Storage Time
tr
tstg
Fall Time
tf
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
300ns
10.9V
-0.5V
VCC =3.0V
0
tr ,tf < 1ns, Du=2%
Vout
10kΩ
Vin
1N916
or equiv.
C Total< 4pF
20μs
10.9V
-9.1V
VCC =3.0V
0
t r,t f < 1ns, Du=2%
MIN.
-
-
60
40
6.0
40
70
100
60
30
-
-
0.65
-
300
-
-
1.0
0.5
100
1.0
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
50
50
-
-
-
-
-
300
-
-
0.2
0.3
0.85
0.95
-
4.0
8.0
10
8.0
400
40
UNIT
nA
nA
V
V
V
V
V
MHz
pF
pF
k
x10-4
5.0 dB
- - 35
- - 35
nS
- - 200
- - 50
2018. 07. 16
Revision No : 4
2/4


Part Number 2N3904S
Description EPITAXIAL PLANAR NPN TRANSISTOR
Maker KEC
PDF Download

2N3904S Datasheet PDF






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