Datasheet4U Logo Datasheet4U.com

2N3906 - EPITAXIAL PLANAR PNP TRANSISTOR

Features

  • Low Leakage Current : ICEX=-50nA(Max. ), IBL=-50nA(Max. ) @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VCE(sat)=-0.4V(Max. ) @IC=-50mA, IB=-5mA. Low Collector Output Capacitance : Cob=4.5pF(Max. ) @VCB=5V. Complementary to 2N3904.

📥 Download Datasheet

Datasheet preview – 2N3906

Datasheet Details

Part number 2N3906
Manufacturer KEC Corporation
File Size 49.82 KB
Description EPITAXIAL PLANAR PNP TRANSISTOR
Datasheet download datasheet 2N3906 Datasheet
Additional preview pages of the 2N3906 datasheet.

📁 Similar Datasheet

  • 2N3906 - Silicon PNP Transistor (NTE)
  • 2N3906 - PNP switching transistor (NXP)
  • 2N3906 - PNP Transistor (Fairchild Semiconductor)
  • 2N3906 - PNP Transistor (Micro Commercial Components)
  • 2N3906 - PNP General-Purpose Amplifier (ON Semiconductor)
  • 2N3906 - PNP Silicon Transistor (AUK corp)
  • 2N3906 - Silicon PNP Transistor (Toshiba)
  • 2N3906 - SMALL SIGNAL PNP TRANSISTOR (STMicroelectronics)
  • 2N3906 - Transistors (Motorola)
  • 2N3906 - PNP EPITAXIAL PLANAR TRANSISTOR (UTC)
Other Datasheets by KEC
  • 2N3906C - EPITAXIAL PLANAR PNP TRANSISTOR
  • 2N3906S - EPITAXIAL PLANAR PNP TRANSISTOR
  • 2N3906SC - EPITAXIAL PLANAR PNP TRANSISTOR
  • 2N3906U - PNP TRANSISTOR
  • 2N3904 - EPITAXIAL PLANAR NPN TRANSISTOR
  • 2N3904C - NPN Transistor
  • 2N3904S - EPITAXIAL PLANAR NPN TRANSISTOR
  • 2N3904SC - EPITAXIAL PLANAR NPN TRANSISTOR

Full PDF Text Transcription

Click to expand full text
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Low Leakage Current : ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. Low Collector Output Capacitance : Cob=4.5pF(Max.) @VCB=5V. Complementary to 2N3904. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current VCBO VCEO VEBO IC IB Collector Power Dissipation Ta=25 Tc=25 PC Junction Temperature Storage Temperature Range Tj Tstg RATING -40 -40 -5 -200 -50 625 1.5 150 -55 150 UNIT V V V mA mA mW W L M C 2N3906 EPITAXIAL PLANAR PNP TRANSISTOR BC JA KE G D H FF 1 23 N DIM MILLIMETERS A 4.
Published: |