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2N3906C - EPITAXIAL PLANAR PNP TRANSISTOR

Features

  • ᴌLow Leakage Current : ICEX=-50nA(Max. ), IBL=-50nA(Max. ) @VCE=-30V, VEB=-3V. ᴌExcellent DC Current Gain Linearity. ᴌLow Saturation Voltage : VCE(sat)=-0.4V(Max. ) @IC=-50mA, IB=-5mA. ᴌLow Collector Output Capacitance : Cob=4.5pF(Max. ) @VCB=5V. ᴌComplementary to 2N3904C.

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Datasheet Details

Part number 2N3906C
Manufacturer KEC Corporation
File Size 71.64 KB
Description EPITAXIAL PLANAR PNP TRANSISTOR
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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ᴌLow Leakage Current : ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. ᴌExcellent DC Current Gain Linearity. ᴌLow Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. ᴌLow Collector Output Capacitance : Cob=4.5pF(Max.) @VCB=5V. ᴌComplementary to 2N3904C. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current VCBO VCEO VEBO IC IB Collector Power Dissipation Ta=25ᴱ Tc=25ᴱ PC Junction Temperature Tj Storage Temperature Range Tstg RATING -40 -40 -5 -200 -50 625 1.
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