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2N5551S EPITAXIAL PLANAR NPN TRANSISTOR

2N5551S Description

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION.HIGH VOLTAGE APPLICATION..

2N5551S Features

* High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max. ) VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max. ) IC=50mA, IB=5mA Low Noise : NF=8dB (Max. ) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO 180 Collector-Emitter

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Datasheet Details

Part number
2N5551S
Manufacturer
KEC
File Size
351.90 KB
Datasheet
2N5551S-KEC.pdf
Description
EPITAXIAL PLANAR NPN TRANSISTOR

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EPITAXIAL PLANAR NPN TRANSISTOR KEC
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