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2N5551S Datasheet, TRANSISTOR, KEC

2N5551S Datasheet, TRANSISTOR, KEC

2N5551S

datasheet Download (Size : 351.90KB)

2N5551S Datasheet
2N5551S

datasheet Download (Size : 351.90KB)

2N5551S Datasheet

2N5551S Features and benefits

2N5551S Features and benefits

High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max.) VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max.) IC=50mA, IB=5mA Low N.

2N5551S Description

2N5551S Description

EPITAXIAL PLANAR NPN TRANSISTOR

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TAGS

2N5551S
EPITAXIAL
PLANAR
NPN
TRANSISTOR
KEC

Manufacturer


KEC

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