2N5551S
2N5551S is EPITAXIAL PLANAR NPN TRANSISTOR manufactured by KEC.
FEATURES
High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50n A(Max.) VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max.) IC=50m A, IB=5m A Low Noise : NF=8d B (Max.)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
IC 600
Base Current
IB 100
Collector Power Dissipation
- 350
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
Note :
- Package Mounted On 99.5% Alumina 10 8 0.6 )
UNIT V V V m A m A m W
EPITAXIAL PLANAR NPN TRANSISTOR
E L BL
DIM MILLIMETERS A 2.93+_ 0.20
B 1.30+0.20/-0.15
C 1.30 MAX D 0.40+0.15/-0.05
E 2.40+0.30/-0.20 1 G 1.90
H 0.95
J 0.13+0.10/-0.05
Q K 0.00 ~ 0.10
L...
