BAV70
BAV70 is SILICON EPITAXIAL PLANAR DIODE manufactured by KEC.
FEATURES
Small Package : SOT-23. Low Forward Voltag : VF=0.9V(Typ.). Fast Reverse Recovery Time : trr=1.6ns(Typ.). Small Total Capacitance : CT=0.9p F(Typ.).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage Reverse Voltage Continuous Forward Current Surge Current (10ms)
Power Dissipation
VRM VR IF IFSM
85 80 250 2 225- 300-
- Junction Temperature Storage Temperature Range
Tj 150 Tstg -55 150
- Note1 : Package Mounted On FR-5 Board (25.4 19.05 1.57mm)
- - Note2 : Package Mounted On 99.5% Alumina (10 8 0.6mm)
UNIT V V m A A m W
SILICON EPITAXIAL PLANAR DIODE
E L BL
DIM MILLIMETERS A 2.93+_ 0.20
B 1.30+0.20/-0.15
C 1.30 MAX D 0.40+0.15/-0.05
E 2.40+0.30/-0.20 1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10 Q
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
P7
Q 0.1 MAX
1. ANODE 1 2. ANODE 2 3. CATHODE
3 21
SOT-23
Marking
Type Name
H7
Lot...
