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BAV70 Datasheet Preview

BAV70 Datasheet

SILICON EPITAXIAL PLANAR DIODE

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SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION
FEATURES
Small Package : SOT-23.
Low Forward Voltag : VF=0.9V(Typ.).
Fast Reverse Recovery Time : trr=1.6ns(Typ.).
Small Total Capacitance : CT=0.9pF(Typ.).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage
Reverse Voltage
Continuous Forward Current
Surge Current (10ms)
Power Dissipation
VRM
VR
IF
IFSM
PD
85
80
250
2
225*
300**
Junction Temperature
Storage Temperature Range
Tj 150
Tstg -55 150
* Note1 : Package Mounted On FR-5 Board (25.4 19.05 1.57mm)
** Note2 : Package Mounted On 99.5% Alumina (10 8 0.6mm)
UNIT
V
V
mA
A
mW
BAV70
SILICON EPITAXIAL PLANAR DIODE
E
L BL
DIM MILLIMETERS
A 2.93+_ 0.20
B 1.30+0.20/-0.15
23
C 1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
Q
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
P7
Q 0.1 MAX
M
1. ANODE 1
2. ANODE 2
3. CATHODE
3
21
SOT-23
Marking
Type Name
H7
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
VF(1)
VF(2)
VF(3)
IR
CT
trr
TEST CONDITION
IF=1mA
IF=10mA
IF=150mA
VR=80V
VR=0, f=1MHz
IF=10mA
MIN.
-
-
-
-
-
-
TYP.
0.60
0.72
-
-
-
-
MAX.
-
-
1.25
0.5
3.0
4.0
UNIT
V
A
pF
nS
2009. 1. 23
Revision No : 1
1/2




KEC

BAV70 Datasheet Preview

BAV70 Datasheet

SILICON EPITAXIAL PLANAR DIODE

No Preview Available !

BAV70
IF - VF
3
10
2
10
10
1
-1
10
-2
10
0
0.2 0.4 0.6 0.8 1.0
FORWARD VOLTAGE VF (V)
1.2
I R - VR
10
Ta=100 C
1
Ta=75 C
-1
10
Ta=50 C
-2
10 Ta=25 C
-3
10
0
20 40 60 80
REVERSE VOLTAGE VR (V)
C T - VR
2.0
f=1MHz
Ta=25 C
1.6
1.2
0.8
0.4
0
0.1 0.3 1
3 10 30 100
REVERSE VOLTAGE VR (R)
t rr - I F
100
Ta=25 C
50 Fig. 1
30
10
5
3
1
0.5
0.1
0.3 1
3 10 30
FORWARD CURRENT IF (mA)
100
Fig. 1. REVERSE RECOVERY TIME(trr ) TEST CIRCUIT
INPUT
WAVEFORM
0
INPUT 0.01µF
DUT
-6V
50ns
E
OUTPUT
SAMPLING
OSCILLOSCOPE
(RIN =50)
IF =10mA
0
IR
PULSE GENERATOR
(ROUT =50)
2009. 1. 23
Revision No : 1
WAVEFORM
0.1 IR
t rr
2/2


Part Number BAV70
Description SILICON EPITAXIAL PLANAR DIODE
Maker KEC
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BAV70 Datasheet PDF





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