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SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION
FEATURES Small Package : SOT-23. Low Forward Voltag : VF=0.9V(Typ.). Fast Reverse Recovery Time : trr=1.6ns(Typ.). Small Total Capacitance : CT=0.9pF(Typ.).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage Reverse Voltage Continuous Forward Current Surge Current (10ms)
Power Dissipation
VRM VR IF IFSM
PD
85 80 250 2 225* 300**
Junction Temperature Storage Temperature Range
Tj 150 Tstg -55 150
* Note1 : Package Mounted On FR-5 Board (25.4 19.05 1.57mm) ** Note2 : Package Mounted On 99.5% Alumina (10 8 0.6mm)
UNIT V V mA A
mW
BAV70
SILICON EPITAXIAL PLANAR DIODE
E L BL
DIM MILLIMETERS A 2.93+_ 0.20
B 1.30+0.20/-0.15
A G H
D
23
C 1.30 MAX D 0.40+0.15/-0.05
E 2.40+0.30/-0.
BAV70 Datasheet
