kf60n06p.
VDSS = 60V, ID = 60A Drain-Source ON Resistance : RDS(ON) =13.2m (Max.) @VGS = 10V Qg(typ.) = 48nC
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KF60N06P
N CHANNEL MOS FIELD EFFECT TRANSISTOR
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E
G B .
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction , electronic lamp ballasts based o.
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