KDV214V
KDV214V is SILICON EPITAXIAL PLANAR DIODE manufactured by KEC.
FEATURES
High Capacitance Ratio : C2V/C25V=6.3(Min.) Low Series Resistance : r S=0.57 (Max.) Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage Junction Temperature
VR Tj
Storage Temperature Range
Tstg
RATING 32 125
-55 125
UNIT V
CE DF
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK
B DIM MILLIMETERS
A A 1.4Ź0.05 B 1.0Ź0.05 C 0.6Ź0.05 D 0.28Ź0.03 E 0.5Ź0.05 F 0.12Ź0.03
Marking
Type Name
V1
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Current
Capacitance
C2V
Capacitance
C25V
Capacitance Ratio
C2V/C25V
Series Resistance r S
Note : Available in matched group for capacitance to 2.0%. C(Max.)-C(Min.) 0.02 C(Min.)
(VR=2~25V)
TEST CONDITION VR=28V VR=2V, f=1MHz VR=25V, f=1MHz
VR=5V, f=470MHz
MIN.
- 14.15 2.06...
