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KDV214 - VARIABLE CAPACITANCE DIODE

Key Features

  • High Capacitance Ratio : C2V/C25V=6.3(Min. ) Low Series Resistance : rS=0.57 (Max. ) Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner.

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Datasheet Details

Part number KDV214
Manufacturer KEC
File Size 362.50 KB
Description VARIABLE CAPACITANCE DIODE
Datasheet download datasheet KDV214 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA TV TUNING. FEATURES High Capacitance Ratio : C2V/C25V=6.3(Min.) Low Series Resistance : rS=0.57 (Max.) Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage VR Junction Temperature Tj Storage Temperature Range Tstg RATING 32 125 -55 125 UNIT V KDV214 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK E A K F L B 1 G H 2 D MM 1. ANODE 2. CATHODE J C I DIM MILLIMETERS A 2.50 +_ 0.1 B 1.25+_ 0.05 C 0.90 +_0.05 D 0.30+0.06/-0.04 E 1.70 +_ 0.05 F MIN 0.17 G 0.126 +_ 0.03 H 0~0.1 I 1.0 MAX J 0.15 +_0.05 K 0.4 +_0.05 L 2 +4/-2 M 4~6 USC Marking UO Type Name Lot No.