KDV214V - SILICON EPITAXIAL PLANAR DIODE

KEC

Key Features

High Capacitance Ratio : C2V/C25V=6.3(Min. ) Low Series Resistance : rS=0.57 (Max. ) Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner.

KDV214V silicon epitaxial planar diode by KEC - Datasheet Preview

Datasheet Details

Part number	KDV214V
Manufacturer	KEC
File Size	31.16 KB
Description	SILICON EPITAXIAL PLANAR DIODE
Datasheet	KDV214V Datasheet

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Other Datasheets by KEC

Part Number	Description
KDV214VA	SILICON EPITAXIAL PLANAR DIODE
KDV214	VARIABLE CAPACITANCE DIODE
KDV214A	VARIABLE CAPACITANCE DIODE
KDV214E	VARIABLE CAPACITANCE DIODE
KDV214EA	SILICON EPITAXIAL PLANAR DIODE

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SEMICONDUCTOR TECHNICAL DATA TV TUNING. FEATURES High Capacitance Ratio : C2V/C25V=6.3(Min.) Low Series Resistance : rS=0.57 (Max.) Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature VR Tj Storage Temperature Range Tstg RATING 32 125 -55 125 UNIT V CE DF KDV214V VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK 21 B DIM MILLIMETERS A A 1.4Ź0.05 B 1.0Ź0.05 C 0.6Ź0.05 D 0.28Ź0.03 E 0.5Ź0.05 F 0.12Ź0.