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KEC

KDV804KS Datasheet Preview

KDV804KS Datasheet

SILICON EPITAXIAL PLANAR DIODE

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SEMICONDUCTOR
TECHNICAL DATA
TUNING OF SEPERATE RESONANT CIRCUIT, PUSH-PULL
CIRCUIT IN FM RANGE, ESPECIALLY FOR CAR AUDIO.
FEATURES
Low Series Resistance : rs=0.3(TYP.).
Small Package : SOT-23.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
Junction Temperature
VR
Tj
Storage Temperature Range
Tstg
RATING
15
150
-55 150
UNIT
V
CLASSIFICATION OF CAPACITANCE RATIO GRADE
GRADE
CAPACITANCE(C2V)
UNIT
B 43 44.5
pF
C 44 45.5
KDV804KS
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
E
L BL
DIM MILLIMETERS
A 2.93+_ 0.20
B 1.30+0.20/-0.15
23
C 1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
Q
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
P7
Q 0.1 MAX
M
1. ANODE 1
2. ANODE 2
3. CATHODE
3
21
SOT-23
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
VR
Reverse Current
IR
Capacitance
C2V
C8V
Capacitance Ratio
C2V/C8V
Series Resistance
rS
TEST CONDITION
IR=10 A
VR=15V
VR=2V, f=1MHz
VR=8V, f=1MHz
C=38pF, f=100MHz
MIN.
15
-
43
24
1.74
-
TYP.
-
-
-
-
-
0.3
MAX.
-
50
45.5
28.8
1.85
0.4
UNIT
V
nA
pF
2011. 5. 3
Revision No : 1
1/2




KEC

KDV804KS Datasheet Preview

KDV804KS Datasheet

SILICON EPITAXIAL PLANAR DIODE

No Preview Available !

KDV804KS
2011. 5. 3
Revision No : 1
2/2


Part Number KDV804KS
Description SILICON EPITAXIAL PLANAR DIODE
Maker KEC
Total Page 2 Pages
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