n channel mos field effect transistor.
VDSS= 600V, ID= 0.5A RDS(ON)=10 (Max) @VGS = 10V Qg(typ) = 4.0nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
.
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies.
FEATURES VDSS= 600V, ID= 0.5A RDS(.
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