KF5N40I transistor equivalent, n channel mos field effect transistor.
VDSS(Min.)= 400V, ID= 4.2A Drain-Source ON Resistance : RDS(ON)=1.6 Qg(typ.) =5.5 nC
(max) @VGS =10V
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
Drain-Source Voltage
Gate.
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