Datasheet4U Logo Datasheet4U.com

KF5N50P - N CHANNEL MOS FIELD EFFECT TRANSISTOR

Download the KF5N50P datasheet PDF. This datasheet also covers the KF5N50F variant, as both devices belong to the same n channel mos field effect transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for electronic ballast and switching mode power supplies.

Key Features

  • VDSS= 500V, ID= 5.0A Drain-Source ON Resistance : RDS(ON)=1.4 Qg(typ) = 12nC D N KF5N50P/F/PZ/FZ N.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KF5N50F_KEC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number KF5N50P
Manufacturer KEC
File Size 142.02 KB
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet KF5N50P Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
KF5N53FS N-Channel 650V Power MOSFET VBsemi
KF50 VERY LOW DROP VOLTAGE REGULATORS STMicroelectronics
KF503 NPN Transistors Tesla Elektronicke
KF504 NPN Transistors Tesla Elektronicke
KF506 NPN Transistors Tesla Elektronicke

Other Datasheets by KEC

Part Number Description
KF5N50PR N CHANNEL MOS FIELD EFFECT TRANSISTOR
KF5N50PZ N CHANNEL MOS FIELD EFFECT TRANSISTOR
KF5N50D N CHANNEL MOS FIELD EFFECT TRANSISTOR
KF5N50DR N CHANNEL MOS FIELD EFFECT TRANSISTOR
KF5N50DS N CHANNEL MOS FIELD EFFECT TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 500V, ID= 5.0A Drain-Source ON Resistance : RDS(ON)=1.4 Qg(typ) = 12nC D N KF5N50P/F/PZ/FZ N CHANNEL MOS FIELD EFFECT TRANSISTOR KF5N50P, KF5N50PZ A O C F E G B Q I K P M L J H @VGS = 10V N MAXIMUM RATING (Tc=25 CHARACTERISTIC ) RATING SYMBOL VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 83 0.66 150 -55 150 N N H DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 13.08 + J K 1.46 _ 0.1 1.4 + L _ 0.1 1.