GENERAL DESCRIPTION
FEATURES
VDSS= 500V, ID= 4.3A Drain-Source ON Resistance : RDS(ON)=1.4 (Max) @VGS = 10V Qg(typ) = 12nC trr(typ) = 150ns H G F F KF5N50DR/DS N CHANNEL MOS FIELD EFFECT TRANSISTOR A C K D L B J E N M DIM MILLIMETERS _ 0.20 A 6.60 + _ 0.20 6.10 + B _ 0.30 5.34 + C _ 0.20 D 0.70 + _ 0.15 E 2.70 + _ 0.10 2.30 + F 0.96 MAX G 0.90 MAX H _ 0.20 1.80 + J _ 0.10 2.30 + K _ 0.10 0.50 + L _ 0.10 M 0.50 + 0.70 MIN N MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 ) SYMBOL VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg RATING 500 30 4.3 2.7 13 270 8.6 1 2 3 UNIT V V 1. GATE 2. DRAIN 3. SOURCE A DPAK (1) mJ mJ V/ns W W/ 20 59.5 0.48 150 -55 150 Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient RthJC RthJA 2.1 110 /W /W PIN CONNECTION (KF5N50DR) D (KF5N50DS) D G G S S 2008.
KEC
