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KF5N50P - N CHANNEL MOS FIELD EFFECT TRANSISTOR

Download the KF5N50P datasheet PDF (KF5N50F included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for n channel mos field effect transistor.

Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for electronic ballast and switching mode power supplies.

Features

  • VDSS= 500V, ID= 5.0A Drain-Source ON Resistance : RDS(ON)=1.4 Qg(typ) = 12nC D N KF5N50P/F/PZ/FZ N.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KF5N50F_KEC.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by KEC
  • KF5N50PR - N CHANNEL MOS FIELD EFFECT TRANSISTOR
  • KF5N50PZ - N CHANNEL MOS FIELD EFFECT TRANSISTOR
  • KF5N50D - N CHANNEL MOS FIELD EFFECT TRANSISTOR
  • KF5N50DR - N CHANNEL MOS FIELD EFFECT TRANSISTOR
  • KF5N50DS - N CHANNEL MOS FIELD EFFECT TRANSISTOR
  • KF5N50DZ - N-Channel MOSFET
  • KF5N50DZ - N CHANNEL MOS FIELD EFFECT TRANSISTOR
  • KF5N50F - N CHANNEL MOS FIELD EFFECT TRANSISTOR

Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 500V, ID= 5.0A Drain-Source ON Resistance : RDS(ON)=1.4 Qg(typ) = 12nC D N KF5N50P/F/PZ/FZ N CHANNEL MOS FIELD EFFECT TRANSISTOR KF5N50P, KF5N50PZ A O C F E G B Q I K P M L J H @VGS = 10V N MAXIMUM RATING (Tc=25 CHARACTERISTIC ) RATING SYMBOL VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 83 0.66 150 -55 150 N N H DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 13.08 + J K 1.46 _ 0.1 1.4 + L _ 0.1 1.
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