KF8N60P transistor equivalent, n-channel mos field effect transistor.
VDSS=600V, ID=8A Drain-Source ON Resistance : RDS(ON)(Max)=1.05 @VGS=10V Qg(typ.)= 24nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING SYMBOL
KF8N60P KF8N60F
Drain-Sou.
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