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KHB011N40F2 Datasheet N Channel Mos Field Effect Transistor

Manufacturer: KEC

Overview: www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA KHB011N40P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR.

Datasheet Details

Part number KHB011N40F2
Manufacturer KEC
File Size 527.25 KB
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet KHB011N40F2_KEC.pdf

General Description

A KHB011N40P1 O C F E G B Q I DIM MILLIMETERS _ 0.2 9.9 + A B C D E This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for electronic ballast and switching mode power supplies.

Key Features

  • VDSS(Min. )= 400V, ID= 10.5A Drain-Source ON Resistance : RDS(ON)=0.53 @VGS =10V Qg(typ. ) =32.5nC K M L J D N N P F G H I J 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 0.2 4.5 + _ 0.2 2.4 + _ 0.2 9.2 + H K L M N O P Q 1 2 3.

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