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KHB019N20F2 - N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

Key Features

  • VDSS=200V, ID=19A Drain-Source ON Resistance : RDS(ON)=0.18 Qg(typ. )=35nC @VGS = 10V 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 4.5 + 0.2 _ 0.2 2.4 + _ 0.2 9.2 + 1. GATE 2. DRAIN 3. SOURCE P Q.

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Datasheet Details

Part number KHB019N20F2
Manufacturer KEC
File Size 527.36 KB
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet KHB019N20F2 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA KHB019N20P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A KHB019N20P1 O C F E G B Q I K M L J D N N H P DIM MILLIMETERS _ 0.2 9.9 + A B C D E F G H I J K L M N O 1 2 3 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters and switching mode power supplies. FEATURES VDSS=200V, ID=19A Drain-Source ON Resistance : RDS(ON)=0.18 Qg(typ.)=35nC @VGS = 10V 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 4.5 + 0.2 _ 0.2 2.4 + _ 0.2 9.2 + 1. GATE 2. DRAIN 3.