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KHB019N20P1 - High Voltage MOSFETs

Download the KHB019N20P1 datasheet PDF. This datasheet also covers the KHB019N20F1 variant, as both devices belong to the same high voltage mosfets family and are provided as variant models within a single manufacturer datasheet.

General Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for DC/DC converters and switching mode power supplies.

Key Features

  • VDSS=200V, ID=19A Drain-Source ON Resistance : RDS(ON)=0.18 Qg(typ. )=35nC @VGS = 10V K M L J D N N P H 1 2 3 DIM.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KHB019N20F1_KECsemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number KHB019N20P1
Manufacturer KEC
File Size 103.44 KB
Description High Voltage MOSFETs
Datasheet download datasheet KHB019N20P1 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters and switching mode power supplies. KHB019N20P1/F1 N CHANNEL MOS FIELD EFFECT TRANSISTOR A O C F E G B Q I FEATURES VDSS=200V, ID=19A Drain-Source ON Resistance : RDS(ON)=0.18 Qg(typ.)=35nC @VGS = 10V K M L J D N N P H 1 2 3 DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 J 13.08 + K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+ M _ 0.2 2.54 + N _ 0.2 4.5 + O _ 0.2 2.4 + P _ 0.2 9.