KHB2D0N60F1
KHB2D0N60F1 is N-Channel MOS Field Effect Transistor manufactured by KEC.
Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies.
A O C F E G B Q I
DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 13.08 + J K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+ M _ 0.2 2.54 + N _ 0.2 4.5 + O _ 0.2 2.4 + P _ 0.2 9.2 + Q
FEATURES
VDSS= 600V, ID= 2.0A Drain-Source ON Resistance : RDS(ON)=5.0 @VGS = 10V
K M L J D N N
Qg(typ.) = 10.9n C
1. GATE 2. DRAIN 3. SOURCE
MAXIMUM RATING (Tc=25
CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25
)
RATING SYMBOL KHB2D0N60P1 KHB2D0N60F1 VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 54 0.43 150 -55 150 2.0 1.2 8.0 120 5.4 5.5 23 0.18 600 30 2.0- 1.2- 8.0- m J
TO-220AB
UNIT V
A C F O E G P
B m J V/ns W W/
L J D M M H Q
DIM MILLIMETERS _ 0.2 A 10.16 + _ 0.2 B 15.87 + _ 0.2 C 2.54 + _ 0.1 D 0.8 + _ 0.1 E 3.18 + _ 0.1 F 3.3 + _ 0.2 G 12.57 + _ 0.1 0.5 + H J 13.0 MAX _ 0.1 K 3.23 + L 1.47 MAX _ 0.2 2.54 + M _ 0.2 N 4.7 + _ 0.2 O 6.68 + P 6.5 _ 0.2 Q 2.76 +
Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to Ambient
1. GATE 2. DRAIN 3. SOURCE
Rth JC Rth CS Rth JA
2.32 0.5 62.5
5.5 62.5
/W /W /W
TO-220IS
- : Drain current limited by maximum junction temperature.
2006. 1. 13
Revision No :...
