Datasheet4U Logo Datasheet4U.com

KHB2D0N60F1 - (KHB2D0N60F1/P1) N-Channel MOS Field Effect Transistor

General Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for switching mode power supplies.

Key Features

  • VDSS= 600V, ID= 2.0A Drain-Source ON Resistance : RDS(ON)=5.0 @VGS = 10V K M L J D N N P Qg(typ. ) = 10.9nC H 1 2 3 1. GATE 2. DRAIN 3. SOURCE.

📥 Download Datasheet

Datasheet Details

Part number KHB2D0N60F1
Manufacturer KEC
File Size 106.18 KB
Description (KHB2D0N60F1/P1) N-Channel MOS Field Effect Transistor
Datasheet download datasheet KHB2D0N60F1 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
KHB2D0N60F2 N-Channel MOSFET KEC
KHB2403B01 BAND PASS FILTERS KEC
KHB2442A01 BAND PASS FILTERS KEC
KHB2450A01 BAND PASS FILTERS KEC
KHB2475A01 BAND PASS FILTERS KEC

Other Datasheets by KEC

Part Number Description
KHB2D0N60F (KHB2D0N60F/P) N-Channel MOS Field Effect Transistor
KHB2D0N60P (KHB2D0N60F/P) N-Channel MOS Field Effect Transistor
KHB2D0N60P1 (KHB2D0N60F1/P1) N-Channel MOS Field Effect Transistor
KHB011N40F1 High Voltage MOSFETs
KHB011N40P1 High Voltage MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA KHB2D0N60P1/F1 N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. A O C F E G B Q I DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 13.08 + J K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+ M _ 0.2 2.54 + N _ 0.2 4.5 + O _ 0.2 2.4 + P _ 0.2 9.2 + Q FEATURES VDSS= 600V, ID= 2.0A Drain-Source ON Resistance : RDS(ON)=5.0 @VGS = 10V K M L J D N N P Qg(typ.) = 10.9nC H 1 2 3 1. GATE 2. DRAIN 3.