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KHB2D0N60P1 - (KHB2D0N60F1/P1) N-Channel MOS Field Effect Transistor

Download the KHB2D0N60P1 datasheet PDF. This datasheet also covers the KHB2D0N60F1 variant, as both devices belong to the same (khb2d0n60f1/p1) n-channel mos field effect transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for switching mode power supplies.

Key Features

  • VDSS= 600V, ID= 2.0A Drain-Source ON Resistance : RDS(ON)=5.0 @VGS = 10V K M L J D N N P Qg(typ. ) = 10.9nC H 1 2 3 1. GATE 2. DRAIN 3. SOURCE.

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Note: The manufacturer provides a single datasheet file (KHB2D0N60F1_KECsemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number KHB2D0N60P1
Manufacturer KEC
File Size 106.18 KB
Description (KHB2D0N60F1/P1) N-Channel MOS Field Effect Transistor
Datasheet download datasheet KHB2D0N60P1 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA KHB2D0N60P1/F1 N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. A O C F E G B Q I DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 13.08 + J K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+ M _ 0.2 2.54 + N _ 0.2 4.5 + O _ 0.2 2.4 + P _ 0.2 9.2 + Q FEATURES VDSS= 600V, ID= 2.0A Drain-Source ON Resistance : RDS(ON)=5.0 @VGS = 10V K M L J D N N P Qg(typ.) = 10.9nC H 1 2 3 1. GATE 2. DRAIN 3.