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KHB4D5N60F - N CHANNEL MOS FIELD EFFECT TRANSISTOR

Download the KHB4D5N60F datasheet PDF. This datasheet also covers the KHB4D5N60P variant, as both devices belong to the same n channel mos field effect transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for switching mode power supplies.

Key Features

  • VDSS(Min. )= 600V, ID= 4.5A Drain-Source ON Resistance : RDS(ON)=2.5 @VGS =10V Qg(typ. ) =17nC.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KHB4D5N60P-KEC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number KHB4D5N60F
Manufacturer KEC
File Size 492.23 KB
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet KHB4D5N60F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMICONDUCTOR TECHNICAL DATA KHB4D5N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. FEATURES VDSS(Min.)= 600V, ID= 4.5A Drain-Source ON Resistance : RDS(ON)=2.5 @VGS =10V Qg(typ.