KHB4D5N60F2
KHB4D5N60F2 is N CHANNEL MOS FIELD EFFECT TRANSISTOR manufactured by KEC.
SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies.
Features
VDSS(Min.)= 600V, ID= 4.5A Drain-Source ON Resistance : RDS(ON)=2.5 @VGS =10V Qg(typ.) =17n C
MAXIMUM RATING (Tc=25 )
RATING
CHARACTERISTIC
SYMBOL
KHB4D5N60F UNIT
KHB4D5N60P
Drain-Source Voltage
Gate-Source Voltage
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3)
Drain Power Dissipation
Tc=25 Derate above25
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
VDSS VGSS
ID IDP EAS EAR dv/dt
PD Tj Tstg
600 30
4.5 4.5- 2.8 2.8- 18 18-
4.5 106 36 0.85 0.29
150 -55...
