KHB4D0N65F
KHB4D0N65F is N CHANNEL MOS FIELD EFFECT TRANSISTOR manufactured by KEC.
- Part of the KHB4D0N65P comparator family.
- Part of the KHB4D0N65P comparator family.
SEMICONDUCTOR
TECHNICAL DATA
KHB4D0N65P/F
N CHANNEL MOS FIELD EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power supplies.
Features
VDSS=650V, ID=4A Drain-Source ON Resistance : RDS(ON)=3.0 @VGS = 10V Qg(typ.)=20n C
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KHB4D0N65P KHB4D0N65F
Drain-Source Voltage
Gate-Source Voltage
Drain Current
@TC=25 Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
Drain Power Dissipation
Tc=25 Derate above25
VDSS VGSS
ID IDP EAS EAR dv/dt
650 30
4.0 4.0- 16 16-
4.5 106 36 0.85 0.29
A m J m J V/ns W W/
Maximum Junction Temperature Storage Temperature...
