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KHB4D0N65F - N CHANNEL MOS FIELD EFFECT TRANSISTOR

This page provides the datasheet information for the KHB4D0N65F, a member of the KHB4D0N65P N CHANNEL MOS FIELD EFFECT TRANSISTOR family.

Datasheet Summary

Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for switch mode power supplies.

Features

  • VDSS=650V, ID=4A Drain-Source ON Resistance : RDS(ON)=3.0 @VGS = 10V Qg(typ. )=20nC.

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Datasheet preview – KHB4D0N65F

Datasheet Details

Part number KHB4D0N65F
Manufacturer KEC
File Size 393.03 KB
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet KHB4D0N65F Datasheet
Additional preview pages of the KHB4D0N65F datasheet.

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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA KHB4D0N65P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power supplies. FEATURES VDSS=650V, ID=4A Drain-Source ON Resistance : RDS(ON)=3.0 @VGS = 10V Qg(typ.)=20nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL UNIT KHB4D0N65P KHB4D0N65F Drain-Source Voltage Gate-Source Voltage Drain Current @TC=25 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25 VDSS VGSS ID IDP EAS EAR dv/dt PD 650 30 4.0 4.0* 16 16* 260 10.
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