KHB4D0N80P1
KHB4D0N80P1 is N CHANNEL MOS FIELD EFFECT TRANSISTOR manufactured by KEC.
SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switch mode power supplies.
Features
VDSS=800V, ID=4A Drain-Source ON Resistance : RDS(ON)=3.6 @VGS = 10V Qg(typ.)=25n C
KHB4D0N80P1/F1/F2
N CHANNEL MOS FIELD EFFECT TRANSISTOR
1. GATE 2. DRAIN 3. SOURCE
DIM A B C D E F G H I J K L M N O P Q
MILLIMETERS 9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05 0.8 +_ 0.1 3.6 +_ 0.2 2.8 +_ 0.1 3.7
0.5+0.1/-0.05
1.5 13.08 +_ 0.3
1.4 +_ 0.1 1.27 +_ 0.1 2.54 +_ 0.2 4.5 +_ 0.2 2.4 +_ 0.2 9.2 +_ 0.2
MAXIMUM RATING (Tc=25 )
RATING
CHARACTERISTIC
SYMBOL
KHB4D0N80F1 UNIT
KHB4D0N80F2
Drain-Source Voltage
Gate-Source Voltage
Drain Current
@TC=25 Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
Drain Power...
