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KHB4D5N60F - N CHANNEL MOS FIELD EFFECT TRANSISTOR

This page provides the datasheet information for the KHB4D5N60F, a member of the KHB4D5N60P N CHANNEL MOS FIELD EFFECT TRANSISTOR family.

Datasheet Summary

Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for switching mode power supplies.

Features

  • VDSS(Min. )= 600V, ID= 4.5A Drain-Source ON Resistance : RDS(ON)=2.5 @VGS =10V Qg(typ. ) =17nC.

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Datasheet preview – KHB4D5N60F

Datasheet Details

Part number KHB4D5N60F
Manufacturer KEC
File Size 492.23 KB
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet KHB4D5N60F Datasheet
Additional preview pages of the KHB4D5N60F datasheet.

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SEMICONDUCTOR TECHNICAL DATA KHB4D5N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. FEATURES VDSS(Min.)= 600V, ID= 4.5A Drain-Source ON Resistance : RDS(ON)=2.5 @VGS =10V Qg(typ.
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