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KHB4D0N80F1 - N CHANNEL MOS FIELD EFFECT TRANSISTOR

Download the KHB4D0N80F1 datasheet PDF. This datasheet also covers the KHB4D0N80P1 variant, as both devices belong to the same n channel mos field effect transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for electronic ballast and switch mode power supplies.

Key Features

  • VDSS=800V, ID=4A Drain-Source ON Resistance : RDS(ON)=3.6 @VGS = 10V Qg(typ. )=25nC KHB4D0N80P1/F1/F2 N.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KHB4D0N80P1-KEC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number KHB4D0N80F1
Manufacturer KEC
File Size 500.08 KB
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet KHB4D0N80F1 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switch mode power supplies. FEATURES VDSS=800V, ID=4A Drain-Source ON Resistance : RDS(ON)=3.6 @VGS = 10V Qg(typ.)=25nC KHB4D0N80P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB4D0N80P1 A E I K M D NN F G B Q L J O C P H 123 1. GATE 2. DRAIN 3. SOURCE DIM A B C D E F G H I J K L M N O P Q MILLIMETERS 9.9 +_ 0.2 15.95 MAX 1.3+0.1/-0.05 0.8 +_ 0.1 3.6 +_ 0.2 2.8 +_ 0.1 3.7 0.5+0.1/-0.05 1.5 13.08 +_ 0.3 1.46 1.4 +_ 0.1 1.27 +_ 0.1 2.54 +_ 0.2 4.5 +_ 0.2 2.4 +_ 0.2 9.2 +_ 0.