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KHB4D0N80F1 - N CHANNEL MOS FIELD EFFECT TRANSISTOR

This page provides the datasheet information for the KHB4D0N80F1, a member of the KHB4D0N80P1 N CHANNEL MOS FIELD EFFECT TRANSISTOR family.

Datasheet Summary

Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for electronic ballast and switch mode power supplies.

Features

  • VDSS=800V, ID=4A Drain-Source ON Resistance : RDS(ON)=3.6 @VGS = 10V Qg(typ. )=25nC KHB4D0N80P1/F1/F2 N.

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Datasheet preview – KHB4D0N80F1

Datasheet Details

Part number KHB4D0N80F1
Manufacturer KEC
File Size 500.08 KB
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet KHB4D0N80F1 Datasheet
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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switch mode power supplies. FEATURES VDSS=800V, ID=4A Drain-Source ON Resistance : RDS(ON)=3.6 @VGS = 10V Qg(typ.)=25nC KHB4D0N80P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB4D0N80P1 A E I K M D NN F G B Q L J O C P H 123 1. GATE 2. DRAIN 3. SOURCE DIM A B C D E F G H I J K L M N O P Q MILLIMETERS 9.9 +_ 0.2 15.95 MAX 1.3+0.1/-0.05 0.8 +_ 0.1 3.6 +_ 0.2 2.8 +_ 0.1 3.7 0.5+0.1/-0.05 1.5 13.08 +_ 0.3 1.46 1.4 +_ 0.1 1.27 +_ 0.1 2.54 +_ 0.2 4.5 +_ 0.2 2.4 +_ 0.2 9.2 +_ 0.
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