Datasheet4U Logo Datasheet4U.com

KHB4D0N80F2 - N CHANNEL MOS FIELD EFFECT TRANSISTOR

This page provides the datasheet information for the KHB4D0N80F2, a member of the KHB4D0N80P1 N CHANNEL MOS FIELD EFFECT TRANSISTOR family.

Datasheet Summary

Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for electronic ballast and switch mode power supplies.

Features

  • VDSS=800V, ID=4A Drain-Source ON Resistance : RDS(ON)=3.6 @VGS = 10V Qg(typ. )=25nC KHB4D0N80P1/F1/F2 N.

📥 Download Datasheet

Datasheet preview – KHB4D0N80F2

Datasheet Details

Part number KHB4D0N80F2
Manufacturer KEC
File Size 500.08 KB
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet KHB4D0N80F2 Datasheet
Additional preview pages of the KHB4D0N80F2 datasheet.

📁 Similar Datasheet

  • KHB011N40F1 - High Voltage MOSFETs (KEC semiconductor)
  • KHB011N40P1 - High Voltage MOSFETs (KEC semiconductor)
  • KHB019N20F1 - High Voltage MOSFETs (KEC semiconductor)
  • KHB019N20P1 - High Voltage MOSFETs (KEC semiconductor)
  • KHB084xxx - Colour Transflective / Reflective LCD Modules (KYOCERA)
  • KHB2D0N60F - (KHB2D0N60F/P) N-Channel MOS Field Effect Transistor (KEC semiconductor)
  • KHB2D0N60F1 - (KHB2D0N60F1/P1) N-Channel MOS Field Effect Transistor (KEC semiconductor)
  • KHB2D0N60P - (KHB2D0N60F/P) N-Channel MOS Field Effect Transistor (KEC semiconductor)
  • KHB2D0N60P1 - (KHB2D0N60F1/P1) N-Channel MOS Field Effect Transistor (KEC semiconductor)
  • KHB6D0N40F - (KHB6D0N40F / KHB6D0N40P) High Voltage MOSFETs (KEC semiconductor)
Other Datasheets by KEC

Full PDF Text Transcription

Click to expand full text
SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switch mode power supplies. FEATURES VDSS=800V, ID=4A Drain-Source ON Resistance : RDS(ON)=3.6 @VGS = 10V Qg(typ.)=25nC KHB4D0N80P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB4D0N80P1 A E I K M D NN F G B Q L J O C P H 123 1. GATE 2. DRAIN 3. SOURCE DIM A B C D E F G H I J K L M N O P Q MILLIMETERS 9.9 +_ 0.2 15.95 MAX 1.3+0.1/-0.05 0.8 +_ 0.1 3.6 +_ 0.2 2.8 +_ 0.1 3.7 0.5+0.1/-0.05 1.5 13.08 +_ 0.3 1.46 1.4 +_ 0.1 1.27 +_ 0.1 2.54 +_ 0.2 4.5 +_ 0.2 2.4 +_ 0.2 9.2 +_ 0.
Published: |