KHB9D0N90NA transistor equivalent, n channel mos field effect transistor.
VDSS(Min.)= 900V, ID= 9A Drain-Source ON Resistance : RDS(ON)=1.05(Typ.) @VGS =10V Qg(typ.) =54nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
Drain-Source Voltage
Gate-Sou.
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