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KMA3D7P20SA - P-Channel MOSFET

General Description

It s mainly suitable for use as a load switch.

Key Features

  • VDSS=-20V, ID=-3.7A Drain to Source on-state Resistance RDS(ON)=76m (Max. ) @ VGS=-4.5V RDS(ON)=112m (Max. ) @ VGS=-2.5V KMA3D7P20SA P-Ch Trench MOSFET E L BL DIM.

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Datasheet Details

Part number KMA3D7P20SA
Manufacturer KEC
File Size 805.84 KB
Description P-Channel MOSFET
Datasheet download datasheet KMA3D7P20SA Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA General Description It s mainly suitable for use as a load switch. FEATURES VDSS=-20V, ID=-3.7A Drain to Source on-state Resistance RDS(ON)=76m (Max.) @ VGS=-4.5V RDS(ON)=112m (Max.) @ VGS=-2.5V KMA3D7P20SA P-Ch Trench MOSFET E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q Max 0.1. M MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL P-Ch UNIT Drain to Source Voltage Gate to Source Voltage Drain Current DC@Ta=25 Pulsed (Note1) (Note1) VDSS VGSS ID IDP -20 V 12 V -3.