VDSS=-30V, ID=-14A. Drain-Source ON Resistance. RDS(ON)=10m (Max.) @ VGS=-10V RDS(ON)=18m (Max.) @ VGS=-4.5V Super High Dense Cell Design 1 4 B1 B2 8 5 A MOSFET Maximum .

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance,, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for portable for portable equipment and SMPS. D P G H T L FEATURES VDSS=-.

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