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KEC

KMB014P30QA Datasheet Preview

KMB014P30QA Datasheet

Trench MOSFET

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TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low
on resistance,, low gate charge and excellent avalanche characteristiscs. It is mainly
suitable for portable for portable equipment and SMPS.
FEATURES
VDSS=-30V, ID=-14A.
Drain-Source ON Resistance.
RDS(ON)=10m (Max.) @ VGS=-10V
RDS(ON)=18m (Max.) @ VGS=-4.5V
Super High Dense Cell Design
MOSFET Maximum Ratings (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL PATING UNIT
Drain Source Voltage
Gate Source Voltage
Drain Current
VDSS
-30
V
VGSS
25 V
DC ID* -14 A
Pulsed
IDP
-70
A
Drain Source Diode Forward Current
IS -1.7 A
Drain Power Dissipation
PD* 2.5 W
Maximum Junction Temperature
Storage Temperature Range
Tj 150
Tstg -55~150
Thermal Resistance, Junction to Ambient
Note : *Surface Mounted on FR4 Board
RthJA*
50
/W
PIN CONNECTION (TOP VIEW)
S1
S2
S3
G4
8D
7D
6D
5D
1
2
3
4
8
7
6
5
KMB014P30QA
P-Ch Trench MOSFET
DP
H
T
G
L
A
DIM MILLIMETERS
A 4.85 +_ 0.2
B1 3.94 +_ 0.2
85
B2 6.02+_ 0.3
D 0.4 +_ 0.1
B1 B2
G 0.15+0.1/-0.05
H 1.63 +_ 0.2
14
L 0.65 +_ 0.2
P 1.27
T 0.20+0.1/-0.05
FLP-8
KMB014P
30QA
706
2007. 6. 29
Revision No : 1
1/4




KEC

KMB014P30QA Datasheet Preview

KMB014P30QA Datasheet

Trench MOSFET

No Preview Available !

KMB014P30QA
ELECTRICAL CHARACTERISTICS (Ta=25 ) UNLESS OTHERWISE NOTED
CHARACTERISTIC
Static
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate Leakage Current
Gate Threshold Voltage
Drain-Source ON Resistance
On-State Drain Current
Forward Transconductance
Dynamic
SYMBOL
TEST CONDITION
BVDSS
IDSS
IGSS
Vth
RDS(ON)*
ID(ON)*
Gfs*
IDS=-250 A, VGS=0V
VDS=-24V, VGS=0V
VGS= 25V, VDS=0V
VDS=VGS, ID=-250 A
VGS=-10V, ID=-12A
VGS=-4.5V, ID=-10A
VDS=-5V, VGS=-10V
VDS=-5V, ID=-10A
Input Capaclitance
Ouput Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delat Time
Turn-On Rise Time
Turn-On Deley Time
Turn-On Fall Time
Source-Drain Diode Ratings
Ciss
Coss
Crss
Qg*
Qgs*
Qgd*
td(on)*
tr*
td(off)*
tr*
VDS=15V, VGS=0V, f=1MHz
VDS=-15V, VGS=-10V, ID=-12A
VDS=-15V, VGS=-4.5V, ID=-12A
VDS=-15V, VGS=-10V, ID=-12A
VDD=-15V, VGS=-10V
RL=12A, RG=3
Source-Drain Forward Voltage
Note
1. Pulse Test : Pulse width 10
VSDF*
VGS=0V, IDR=-1.7A,
, Duty cycle 1%
MIN. TYP. MAX. UNIT
-30 - - V
- - -1 A
- - 100 nA
-1.4 -1.9 -2.6
V
- 8.5 10
m
- 12 18
-50 - - A
- 14 -
S
- 3625 -
- 980 -
- 705 -
- 65.5 -
- 32.6 -
- 10.9 -
- 17.5 -
- 48.5 -
- 20.3 -
- 110.8 -
- 52.8 -
pF
nC
ns
- -0.73 -1.2 V
2007. 6. 29
Revision No : 1
2/2


Part Number KMB014P30QA
Description Trench MOSFET
Maker KEC
Total Page 4 Pages
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