Datasheet4U Logo Datasheet4U.com

KMB054N40IA - N-Channel Trench MOSFET

General Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for Back-light Inverter and Power Supply.

Key Features

  • VDSS=40V, ID=54A. Low Drain-Source ON Resistance. : RDS(ON)=8.5m (Max. ) @ VGS=10V : RDS(ON)=11m (Max. ) @ VGS=4.5V Super High Dense Cell Design. High Power and Current Handling Capability.

📥 Download Datasheet

Datasheet Details

Part number KMB054N40IA
Manufacturer KEC
File Size 53.23 KB
Description N-Channel Trench MOSFET
Datasheet download datasheet KMB054N40IA Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
KMB110F SCHOTTKY SURFACE MOUNT FLAT BRIDGE RECTIFIER Sunmate
KMB1117 1A Low Dropout Positive Adjustable or Fixed-Mode Regulator Kexin
KMB12F SCHOTTKY SURFACE MOUNT FLAT BRIDGE RECTIFIER Sunmate
KMB14F SCHOTTKY SURFACE MOUNT FLAT BRIDGE RECTIFIER Sunmate
KMB16F SCHOTTKY SURFACE MOUNT FLAT BRIDGE RECTIFIER Sunmate

Other Datasheets by KEC

Part Number Description
KMB054N40DA N-Channel Trench MOSFET
KMB054N40DB N-Channel Trench MOSFET
KMB054N40DC N-Channel Trench MOSFET
KMB054N45DA N-Channel Trench MOSFET
KMB050N60P N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMICONDUCTOR TECHNICAL DATA KMB054N40IA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and Power Supply. FEATURES VDSS=40V, ID=54A. Low Drain-Source ON Resistance. : RDS(ON)=8.5m (Max.) @ VGS=10V : RDS(ON)=11m (Max.) @ VGS=4.5V Super High Dense Cell Design. High Power and Current Handling Capability.