VDSS=40V, ID=54A. Low Drain-Source ON Resistance. : RDS(ON)=8.5m (Max.) @ VGS=10V : RDS(ON)=11m (Max.) @ VGS=4.5V Super High Dense Cell Design. High Power and Current Han.

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and Power Supply. FEATURES VDSS=40V, ID=54A. Low D.

KMB054N40DA

KMB054N40DB

KMB054N40DC

KMB054N45DA

KMB050N60P

KMB050N60PA

KMB010P30QA

KMB012N30QA

KMB014P30QA

KMB030N30D

KMB035N40DB

KMB035N40DC

KMB060N40BA