KMB6D0DN30QB - Dual N-Channel MOSFET

KEC

KMB6D0DN30QB Datasheet Preview — Preview of KMB6D0DN30QB PDF

Datasheet Details

Part number	KMB6D0DN30QB
Manufacturer	KEC ↗
File Size	372.37 KB
Description	Dual N-Channel MOSFET
Datasheet	KMB6D0DN30QB-KEC.pdf

KMB6D0DN30QB Product details

Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

Features

VDSS=30V, ID=6A. Drain-Source ON Resistance. RDS(ON)=28m (Max. ) @VGS=10V RDS(ON)=42m (Max. ) @VGS=4.5V Super High Dense Cell Design High Power and Current Handing Capability.

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Published: Jun 21, 2016 |